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High-Voltage, 350mA, High-Brightness LED
Driver with PWM Dimming and 5V Regulator
ABSOLUTE MAXIMUM RATINGS
IN to GND ...............................................................-0.3V to +45V
OUT, DIM, and EN to GND ..........................-0.3V to (V IN + 0.3V)
CS+, CS-, V5 to GND ...............................................-0.3V to +6V
OUT Short Circuited to GND Duration
(at V IN = +16V) .........................................................60 minutes
Maximum Current into Any Pin (except IN and OUT) .........±20mA
Continuous Power Dissipation (T A = +70°C)
16-Pin TQFN 5mm x 5mm
(derate 33.3mW/°C above +70°C) ............................2666.7mW
8-Pin SO (derate 23.3mW/°C above +70°C).............1860.5mW
Junction-to-Case Thermal Resistance ( θ JC )(Note 1)
8-Pin SO ...........................................................................7°C/W
16-Pin TQFN.....................................................................2°C/W
Junction-to-Ambient Thermal Resistance ( θ JA )(Note 1)
8-Pin SO .........................................................................43°C/W
16-Pin TQFN...................................................................30°C/W
Operating Junction Temperature Range ...........-40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: Package thermal resistances obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, see www.maxim-ic.com/thermal-tutorial .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V IN = V EN = +12V, C V5 = 0.1μF to GND, I V5 = 0, V CS- = 0V, V DIM = +4V, connect R SENSE = 0.58 ? between CS+ and CS-.
T A = -40°C to +125°C, unless otherwise noted. Typical values are at T A = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage Range
Ground Current
Shutdown Supply Current
Guaranteed Output Current
Output Current Accuracy
Dropout Voltage (Note 4)
Output Current Slew Rate
V IN
I G
I SHDN
I OUT
? VDO
(Note 3)
I LOAD = 350mA
V EN ≤ 0.6V
R SENSE = 0.55 ?
35mA < I OUT < 350mA
I OUT = 350mA (current pulsed),
12V < V IN < 40V
I OUT = 350mA (current pulsed),
6.5V < V IN < 12V
Current rising, V DIM rising to 4V
Current falling, V DIM falling to 0.6V
6.5
350
1.28
35
±3.5
0.55
0.55
7.8
7.8
40.0
3
70
1.2
1.5
V
mA
μA
mA
%
V
mA/μs
Short-Circuit Current
V IN = 12V, V CS+ = 0V
400
500
650
mA
LOGIC INPUT
EN Input Current
I EN
-2.5
-1.0
-0.2
μA
EN Input Voltage High
EN Input Voltage Low
V IH
V IL
2.8
0.6
V
V
Turn-On Time
t ON
V EN rising edge to 90% of OUT
110
350
μs
CURRENT SENSE
Regulated R SENSE Voltage
V SENSE
V SENSE = V CS+ - V CS-
193
200
207
mV
CS- Voltage Range
-0.3
+4.1
V
Input Current (CS+)
V CS+ = 220mV
2.7
7.0
μA
Input Current (CS-)
V CS+ = 220mV
-50
17.2
μA
DIM Input Current
-2.5
-1.0
-0.2
μA
DIM Input Voltage High
DIM Input Voltage Low
V IH
V IL
4
0.6
V
V
Turn-On Time
Turn-Off Time
t ON
t OFF
After V DIM rising to 4V (Note 5)
After V DIM falling to 0.6V (Note 5)
110
70
μs
μs
2
_______________________________________________________________________________________
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